P042N10G - MOSFET

Description

technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

This is suitable device for Synchronous rectification and high speed switching applications.

Features

Fast Switching.
Low On-Resistance.
Low Gate Charge.
Low Reverse transfer capacitances.
High avalanche ruggedness.
RoHS product.

BELLING

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Datasheet Details

Part number	P042N10G
Manufacturer	BELLING
File Size	0.98 MB
Description	MOSFET
Datasheet	P042N10G Datasheet
Additional preview pages of the P042N10G datasheet.

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Full PDF Text Transcription

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BLP042N10G MOSFET Step-Down Converter 1．Description BLP042N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench Ⅱ technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit VDSS 100 V TO-220 ID 120 A RDS(on)@10V.typ 3.

Published: Nov 15, 2024 |