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P0403BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 4.3mΩ @VGS = 10V
ID 81A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
81 51 200
Avalanche Current
IAS 66
Avalanche Energy
L = 0.1mH
EAS
220
Power Dissipation
TC = 25 °C TC = 100 °C
PD
51 20
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC RqJA
TYPICAL
MAXIMUM
2.45 62.5
UNITS °C / W
Ver 1.
P0403BD Datasheet
