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P0403BDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 4mΩ @VGS = 10V
ID 84A
TO-252
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 25
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC= 25 °C TC= 100 °C
ID IDM
84 67 200
Avalanche Current
IAS 66
Avalanche Energy
L=0.1mH
EAS
220
Power Dissipation
TC= 25 °C TC= 100°C
PD
51 32
Operating Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.)
Tj, Tstg TL
-55 to 150 275
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
P0403BDG Datasheet
