- 12A, 600V, RDS(on) = 0.7Ω@VGS = 10 V - Low gate charge ( typical 52 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute.

This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in .

TSF12N60MS

TSF12N65M

TSF10H100C

TSF10H120C

TSF10H150C

TSF10H200C

TSF10N60C

TSF10N60M

TSF10N60S

TSF10N65M

TSF10N80M

TSF10U60C

TSF110D00A-S4

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