* 650V @TJ = 150 ℃
* Typ. RDS(on) = 0.4Ω
* Ultra Low Gate Charge (typ. Qg = 30nC)
* 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VG.

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss,.

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