TSF10H100C datasheet, rectifier equivalent, Taiwan Semiconductor

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Features and benefits

Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage -.

Description

RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE 12 10 8 6 4 2 0 0 25 50 75 100 125 150 INSTANTANEOUS FORWARD CURRENT (A) FIG. 2 TYPICAL FORWARD CHARACTERISTICS 100 TJ=150oC AVERAGE FORWARD C.

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