TPCS8208
TPCS8208 is N-Channel MOSFET manufactured by Toshiba.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
Lithium Ion Battery Applications
- Small footprint due to small and thin package
- Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.)
- High forward transfer admittance: |Yfs| = 15 S (typ.)
- Low leakage current: IDSS = 10 μA (max) (VDS = 20 V)
- Enhancement mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 μA)
- mon drain
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC Pulse
(Note 1) (Note 1)
Single-device
Drain power operation (Note 3a) dissipation
(t = 10 s)
Single-device value
(Note 2a) at dual operation
(Note 3b)
Single-device
Drain power operation (Note 3a) dissipation
(t = 10 s)
Single-device value
(Note 2b) at dual operation
(Note 3b)
Single pulse avalanche energy (Note 4)
Avalanche current
Repetitive avalanche energy Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD (1)
PD...
