Datasheet4U Logo Datasheet4U.com

TPCS8204 - TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

Key Features

  • n or otherwise under any intellectual property or other rights of.

📥 Download Datasheet

Datasheet Details

Part number TPCS8204
Manufacturer Toshiba
File Size 304.01 KB
Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
Datasheet download datasheet TPCS8204 Datasheet

Other Datasheets by Toshiba

Part Number Description
TPCS8201 MOSFET
TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
TPCS8208 N-Channel MOSFET
TPCS8209 High performance/ Low Cost 20 pin OTP
TPCS8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPCS8210 SILICON N CHANNEL MOS TYPE LITHIUM BATTERY APPLICATIONS
TPCS8211 N-Channel MOSFET
TPCS8212 Silicon N Channel MOS Type (U-MOSIII)
TPCS8213 N-Channel MOSFET
TPCS8214 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TPCS8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8204 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.) High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating 20 20 ±12 6 24 1.1 W 0.