TPCS8209 - High performance/ Low Cost 20 pin OTP

Toshiba

Key Features

nted by implication or otherwise under any intellectual property or.

TPCS8209 high performance/ low cost 20 pin otp by Toshiba - Datasheet Preview

Datasheet Details

Part number	TPCS8209
Manufacturer	Toshiba
File Size	362.44 KB
Description	High performance/ Low Cost 20 pin OTP
Datasheet	TPCS8209 Datasheet

Other Datasheets by Toshiba

Part Number	Description
TPCS8209	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPCS8201	MOSFET
TPCS8204	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPCS8205	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
TPCS8208	N-Channel MOSFET
TPCS8210	SILICON N CHANNEL MOS TYPE LITHIUM BATTERY APPLICATIONS
TPCS8211	N-Channel MOSFET
TPCS8212	Silicon N Channel MOS Type (U-MOSIII)
TPCS8213	N-Channel MOSFET
TPCS8214	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

TPCS8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8209 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) High forward transfer admittance: |Yfs| = 9.2 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating 20 20 ±12 5 20 1.1 W 0.