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TH50VSF3583AASB Datasheet Multi-chip Integrated Circuit Silicon Gate CMOS

Manufacturer: Toshiba

Overview: TH50VSF3582/3583AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The TH50VSF3582/3583AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 33,554,432-bit flash memory.

The CIOS and CIOF inputs can be used to select the optimal memory configuration.

The power supply.

Key Features

  • Power supply voltage VCCs = 2.67 V~3.3 V VCCf = 2.67 V~3.3 V www. DataSheet4U. com.
  • Data retention supply voltage VCCs = 1.5 V~3.3 V.
  • Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (FLASH).
  • Block erase architecture for flash memory 8 × 8 Kbytes 63 × 64 Kbytes.
  • Organization.
  • CIOF VCC VCC VSS CIOS VCC VSS VSS Flash Memory 2,097,152 words of 16 bits 2,097,152 words of 16 bits 4,194,.

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