TH50VSF3583AASB

TH50VSF3583AASB is MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS manufactured by Toshiba.

TH50VSF3583AASB Datasheet

Part number	TH50VSF3583AASB
Download	TH50VSF3583AASB Datasheet (PDF)
File Size	611.07 KB
Manufacturer	Toshiba
Description	MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS

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TH50VSF3583AASB Distributor

TH50VSF3583AASB Description

The TH50VSF3582/3583AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 33,554,432-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration. FLASH MEMORY a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation.

TH50VSF3583AASB Key Features

Data retention supply voltage VCCs = 1.5 V~3.3 V
Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 µA maximum (SRAM CMOS level) Standby: 10 µA maximu
Block erase architecture for flash memory 8 × 8 Kbytes 63 × 64 Kbytes
Organization
PIN ASSIGNMENT (TOP VIEW)
Case: CIOF = VCC, CIOS = VCC (×16, ×16)
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devic

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