TH50VSF3583AASB Datasheet

Manufacturer: Toshiba

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	TH50VSF3583AASB
Datasheet	TH50VSF3583AASB TH50VSF3582AASB Datasheet (PDF)
File Size	611.07 KB
Manufacturer	Toshiba
Description	MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS

TH50VSF3583AASB Overview

The TH50VSF3582/3583AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 33,554,432-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration. FLASH MEMORY a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation.

TH50VSF3583AASB Key Features

Data retention supply voltage VCCs = 1.5 V~3.3 V
Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 µA maximum (SRAM CMOS level) Standby: 10 µA maximu
Block erase architecture for flash memory 8 × 8 Kbytes 63 × 64 Kbytes
Organization
PIN ASSIGNMENT (TOP VIEW)
Case: CIOF = VCC, CIOS = VCC (×16, ×16)
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devic

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Datasheet Details

TH50VSF3583AASB Overview

TH50VSF3583AASB Key Features

More Datasheets from Toshiba

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