logo

TH50VSF3583AASB Datasheet, Toshiba Semiconductor

TH50VSF3583AASB cmos equivalent, multi-chip integrated circuit silicon gate cmos.

TH50VSF3583AASB Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 611.07KB)

TH50VSF3583AASB Datasheet
TH50VSF3583AASB
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 611.07KB)

TH50VSF3583AASB Datasheet

Features and benefits

Power supply voltage VCCs = 2.67 V~3.3 V VCCf = 2.67 V~3.3 V www.DataSheet4U.com
* Data retention supply voltage VCCs = 1.5 V~3.3 V
* Current consumption Operatin.

Application

FEATURES Power supply voltage VCCs = 2.67 V~3.3 V VCCf = 2.67 V~3.3 V www.DataSheet4U.com
* Data retention supply .

Description

The TH50VSF3582/3583AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 33,554,432-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration. The power supply. FLASH MEMORY a Simu.

Image gallery

TH50VSF3583AASB Page 1 TH50VSF3583AASB Page 2 TH50VSF3583AASB Page 3

TAGS

TH50VSF3583AASB
MULTI-CHIP
INTEGRATED
CIRCUIT
SILICON
GATE
CMOS
Toshiba Semiconductor

Manufacturer


Toshiba (https://www.toshiba.com/) Semiconductor

Related datasheet

TH50VSF3582AASB

TH50VSF3680

TH50VSF3681AASB

TH50VSF2580AASB

TH50VSF2581AASB

TH50VSF2582AASB

TH50VSF2583AASB

TH50

TH501

TH501S

TH502

TH502S

TH503

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts