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D2012 Toshiba (https://www.toshiba.com/) Semiconductor 2SD2012

Title XFMR, POE, 1PORT, SMD
Description TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) • High power dissipation: PC = 25 W (Tc = 25°C) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Coll...
Features olute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-01 Electrical Characteristics (Ta = 25°C) Characteristics...

Datasheet PDF File D2012 Datasheet - 121.20KB
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element14 Asia-Pacific
Stock 150 In stock
Price
3000 units: 4363 KRW
1500 units: 4447 KRW
300 units: 4587 KRW
100 units: 4709 KRW
50 units: 4871 KRW
25 units: 5032 KRW
10 units: 5626 KRW
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D2012 Distributor

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Distributor
element14 Asia-Pacific
150
3000 units: 4363 KRW
1500 units: 4447 KRW
300 units: 4587 KRW
100 units: 4709 KRW
50 units: 4871 KRW
25 units: 5032 KRW
10 units: 5626 KRW
Bourns Inc

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DigiKey
4000
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Walsin Technology Corporation

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Avnet Asia
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Pulse Electronics Corporation

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Mouser Electronics
7990
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TAIYO YUDEN

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RS
67
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Kingbright

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Chip1Stop
780
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Onlinecomponents.com
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Ferraz Shawmut

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2858
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TTI
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