TOSHIBA Transistor Silicon NPN Triple Diffused Type
Audio Frequency Power Amplifier Applications
• Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A)
• High power dissipation: PC = 25 W (Tc = 25°C)
Absolute Maximum Ratings (Ta = 25°C)
Ta = 25°C
Tc = 25°C
Storage temperature range
−55 to 150
Note 1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 1.7 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).