Datasheet4U Logo Datasheet4U.com

D2012 - 2SD2012

📥 Download Datasheet

Datasheet preview – D2012

📁 Similar Datasheet

  • D2012 - NPN Silicon Power Transistor (STMicroelectronics)
  • D2012 - Si NPN Transistor (Wuxi Youda Electronics)
  • D2012UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2010UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2011UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2013UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2014UK - RF SILICON FET (Seme LAB)
  • D2014UK - RF Silicon Mosfet (TT)
  • D2015UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2015UK - RF Silicon Mosfet (TT)
Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) • High power dissipation: PC = 25 W (Tc = 25°C) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 60 60 7 3 0.5 2.0 25 150 −55 to 150 V V V A A W °C °C JEDEC JEITA ― ― Note 1: Using continuously under heavy loads (e.g.
Published: |