Datasheet4U Logo Datasheet4U.com

D2012 2SD2012

D2012 Description

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm * Low saturation v.

D2012 Applications

* 2SD2012 Unit: mm
* Low saturation voltage: VCE (sat) = 0.4 V (typ. ) (IC = 2A / IB = 0.2A)
* High power dissipation: PC = 25 W (Tc = 25°C) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base vo

📥 Download Datasheet

Preview of D2012 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • D2012UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2010UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2011UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2013UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2014UK - RF SILICON FET (Seme LAB)
  • D2015UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2016 - 2SD2016 (Allegro)
  • D2016UK - METAL GATE RF SILICON FET (Seme LAB)

📌 All Tags

2SD2012 Toshiba Semiconductor
Toshiba Semiconductor D2012-like datasheet