• Part: D2012
  • Description: Si NPN Transistor
  • Category: Transistor
  • Manufacturer: Wuxi Youda Electronics
  • Size: 171.90 KB
Download D2012 Datasheet PDF
Wuxi Youda Electronics
D2012
DESCRIPTION AND FEATURES - Collector-Emitter voltage: BVCBO= 60V - Collector current up to 3A - High h FE linearity PIN CONFIGURATIONS PIN 1 2 3 SYMBOL Emitter Collector Base ABSOLUTE MAXIMUM RATINGS (Tamb=25¡æ ) PARAMETER SYMBOL Collector-Base Voltage BVCBO Collector-Emitter Voltage BVCEO Emitter-Base Voltage BVEBO Tcase=25¡æ Collector Dissipation PCM Tamb=25¡æ DC ICM Collector Current Pulse Icp Base Current IB Junction Temperature Tj Storage Temperature Tstg VALUE 60 50 7 30 1.5 3 7 0.6 +150 -55¡« +150 UNIT V V V W W A A A ¡æ ¡æ ELECTRICAL CHARACTERISTICS (Tamb=25¡æ ,all voltage referenced to GND Unless otherwise specified) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance SYMBOL ICBO IEBO h FE1 h FE2 VCE(sat) VBE(sat) f T Cob . TEST CONDITIONS Vc B=50V, IE=0 VEB=5V, IC=0 Vc E=5V, IC=20m A Vc E=5V, IC=0.5A Ic=3A, IB=0.3A Ic=2A,...