D2012
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2012
Audio Frequency Power Amplifier Applications
2SD2012
Unit: mm
- Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A)
- High power dissipation: PC = 25 W (Tc = 25°C)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC IB
Tj Tstg
60 60 7 3 0.5 2.0 25 150
- 55 to 150
V V V A A
°C °C
JEDEC JEITA
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Note 1: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-10R1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
Weight: 1.7 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the...
