logo

TPN4R712MD Datasheet, Toshiba

TPN4R712MD mosfet equivalent, silicon p-channel mosfet.

TPN4R712MD Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 746.06KB)

TPN4R712MD Datasheet

Features and benefits

(1) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = -4.5 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0.5 to .

Application


* Lithium-Ion Secondary Batteries
* Power Management Switches 2. Features (1) Low drain-source on-resistance: RD.

Image gallery

TPN4R712MD Page 1 TPN4R712MD Page 2 TPN4R712MD Page 3

TAGS

TPN4R712MD
Silicon
P-Channel
MOSFET
Toshiba

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts