TPN4R203NC transistor equivalent, field effect transistor.
(1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 3.5 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement .
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* Lithium-Ion Secondary Batteries Power Management Switches
2. Features
(1) (2) (3) (4) Small, thin package L.
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