TPN1110ENH mosfet equivalent, silicon n-channel mosfet.
(1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 96 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS .
* High-Efficiency DC-DC Converters
* Switching Voltage Regulators
2. Features
(1) High-speed switching (2) Small.
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