TPCC8076 mosfet equivalent, silicon n-channel mosfet.
(1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (.
* Lithium-Ion Secondary Batteries
* Notebook PCs
* Mobile Equipments
2. Features
(1) Small footprint due to .
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