ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 45.0dBm at 9.5GHz to 10.5GHz ŋHIGH GAIN G1dB= 7.0dB at 10.5GHz to 10.5GHz ŋLOW INTERMODULATION DISTORTION IM3= -25dBc.

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