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TH58BVG3S0HTAI0 Datasheet, Toshiba

TH58BVG3S0HTAI0 e2prom equivalent, 8 gbit (1g x 8 bit) cmos nand e2prom.

TH58BVG3S0HTAI0 Avg. rating / M : 1.0 rating-11

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TH58BVG3S0HTAI0 Datasheet

Features and benefits


* Organization x8 Memory cell array 4224 × 128K × 8 × 2 Register 4224 × 8 Page size 4224 bytes Block size (256K + 8K) bytes
* Modes Read, Reset, Auto Pa.

Application

such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require h.

Description

The TH58BVG3S0HTAI0 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks. The device has a 4224-byte static register which allo.

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TAGS

TH58BVG3S0HTAI0
GBIT
BIT
CMOS
NAND
E2PROM
Toshiba

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