TH58BVG3S0HBAI4 datasheet, e2prom equivalent, Toshiba

Features and benefits

* Organization Memory cell array Register Page size Block size x8 4224 × 128K × 8 × 2 4224 × 8 4224 bytes (256K + 8K) bytes
* Modes Read, Reset, Auto Page Progr.

Application

such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require h.

Description

The TH58BVG3S0HBAI4 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks. The device has a 4224-byte static register which allo.

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