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TC58FVB321 - 32-MBIT (4M x 8 BITS / 2M x 16 BITS) CMOS FLASH MEMORY

This page provides the datasheet information for the TC58FVB321, a member of the TC58FVT321XB-70 32-MBIT (4M x 8 BITS / 2M x 16 BITS) CMOS FLASH MEMORY family.

Description

The TC58FVT321/B321 is a 33,554,432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4,194,304 words × 8 bits or as 2,097,152 words × 16 bits.

Features

  • commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVT321/B321 also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation.

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Datasheet Details

Part number TC58FVB321
Manufacturer Toshiba
File Size 560.08 KB
Description 32-MBIT (4M x 8 BITS / 2M x 16 BITS) CMOS FLASH MEMORY
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TC58FVT321/B321FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M × 8 BITS / 2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVT321/B321 is a 33,554,432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4,194,304 words × 8 bits or as 2,097,152 words × 16 bits. The TC58FVT321/B321 features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVT321/B321 also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation. FEATURES • Power supply voltage • Block erase architecture VDD = 2.7 V~3.
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