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TC58FV321 - (TC58Fxxx) 32-MBIT (4M x 8 BITS / 2M x 16 BITS) CMOS FLASH MEMORY

Download the TC58FV321 datasheet PDF. This datasheet also covers the TC58FVXB-10 variant, as both devices belong to the same (tc58fxxx) 32-mbit (4m x 8 bits / 2m x 16 bits) cmos flash memory family and are provided as variant models within a single manufacturer datasheet.

Description

The TC58FVT321/B321 is a 33,554,432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4,194,304 words × 8 bits or as 2,097,152 words × 16 bits.

Features

  • commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVT321/B321 also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TC58FVXB-10_ToshibaSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TC58FV321
Manufacturer Toshiba
File Size 555.05 KB
Description (TC58Fxxx) 32-MBIT (4M x 8 BITS / 2M x 16 BITS) CMOS FLASH MEMORY
Datasheet download datasheet TC58FV321 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
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TC58FVB641 64-MBIT (8M x 8 BITS / 4M x 16 BITS) CMOS FLASH MEMORY Toshiba
TC58FVB800 8 MBIT (1M x 8 BITS / 512K x 16 BITS) CMOS FLASH MEMORY Toshiba

Other Datasheets by Toshiba

Part Number Description
TC58FVB160A SILICON GATE CMOS
TC58FVB400 4-MBIT CMOS FLASH MEMORY
TC58FVT004 4M (512K x 8) BIT CMOS FLASH MEMORY
TC58FVT160 16-MBIT CMOS FLASH MIMORY
TC58FVT160A SILICON GATE CMOS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TC58FVT321/B321FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M × 8 BITS / 2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVT321/B321 is a 33,554,432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4,194,304 words × 8 bits or as 2,097,152 words × 16 bits. The TC58FVT321/B321 features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVT321/B321 also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation. FEATURES • • • • Power supply voltage VDD = 2.7 V~3.
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