TC58BVG2S0HBAI6 datasheet, e2prom equivalent, Toshiba

Features and benefits

* Organization x8 Memory cell array 4224 × 128K × 8 Register 4224 × 8 Page size 4224 bytes Block size (256K + 8K) bytes
* Modes Read, Reset, Auto Page P.

Application

such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require h.

Description

The TC58BVG2S0HBAI6 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks. The device has a 4224-byte static register which allo.

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