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TC58BVG2S0HBAI4 Datasheet, Toshiba

TC58BVG2S0HBAI4 e2prom equivalent, 4 gbit (512m x 8 bit) cmos nand e2prom.

TC58BVG2S0HBAI4 Avg. rating / M : 1.0 rating-11

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TC58BVG2S0HBAI4 Datasheet

Features and benefits


* Organization Memory cell array Register Page size Block size x8 4224 × 128K × 8 4224 × 8 4224 bytes (256K + 8K) bytes
* Modes Read, Reset, Auto Page Program, .

Application

such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require h.

Description

The TC58BVG2S0HBAI4 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks. The device has a 4224-byte static register which allo.

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TAGS

TC58BVG2S0HBAI4
GBIT
512M
BIT
CMOS
NAND
E2PROM
Toshiba

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