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TC518512FL-10LV Datasheet, Toshiba

TC518512FL-10LV ram equivalent, silicon gate cmos pseudo static ram.

TC518512FL-10LV Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 384.03KB)

TC518512FL-10LV Datasheet
TC518512FL-10LV
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 384.03KB)

TC518512FL-10LV Datasheet

Features and benefits

a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RIW thus simplifying the microprocessor inter.

Description

The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed ar}QJow power storage..

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TAGS

TC518512FL-10LV
SILICON
GATE
CMOS
PSEUDO
STATIC
RAM
Toshiba

Manufacturer


Toshiba (https://www.toshiba.com/)

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