Datasheet Summary
MOSFETs Silicon N-channel MOS (U-MOS-H)
1. Applications
- Power Management Switches
- DC-DC Converters
2. Features
(1) AEC-Q101 qualified (Note 1) (2) 175 MOSFET (3) 4.5-V drive (4) Low drain-source on-resistance
: RDS(ON) = 65 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 51 mΩ (typ.) (@VGS = 10 V)
Note 1: For detail information, please contact our sales.
3. Packaging and Pin Assignment
TSOP6F
1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6: Drain
©2018-2020 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2019-03
2020-09-24 Rev.4.0
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