SSM6K513NU
SSM6K513NU is Silicon N-Channel MOSFET manufactured by Toshiba.
Features
(1) 4.5 V drive (2) Low drain-source on-resistance
: RDS(ON) = 8.0 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 6.5 mΩ (typ.) (@VGS = 10 V)
3. Packaging and Pin Assignment
UDFN6B
1, 2, 5, 6: Drain 3: Gate 4: Source
©2016-2024
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2016-05
2024-10-01 Rev.6.0
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25- )
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage
VDSS
(Note 1)
VGSS
±20
Drain current (DC) Drain current (pulsed)
(Note 2)
Power dissipation Power dissipation
(Note 3)
(t ≤ 10 s)
(Note 3)
Single-pulse avalanche energy
(Note 4)
37.6 m J
Avalanche current Channel temperature Storage temperature
Tch...
