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SSM3K361TU - Silicon N-Channel MOSFET

Key Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175.
  • MOSFET (3) 4.5 V drive (4) Low drain-source on-resistance : RDS(ON) = 65 mΩ (typ. ) (@VGS = 4.5 V) RDS(ON) = 51 mΩ (typ. ) (@VGS = 10 V) 3. Packaging and Pin Assignment SSM3K361TU 1: Gate 2: Source 3: Drain UFM 4. Orderable part number Orderable part number AEC-Q101 SSM3K361TU,LF SSM3K361TU,LXGF SSM3K361TU,LXHF.
  • YES YES Note 1: For detail information, please contact our sales. (Note 1) Note General Use.

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Datasheet Details

Part number SSM3K361TU
Manufacturer Toshiba
File Size 261.61 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet SSM3K361TU Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-channel MOS (U-MOS�-H) SSM3K361TU 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175 � MOSFET (3) 4.5 V drive (4) Low drain-source on-resistance : RDS(ON) = 65 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 51 mΩ (typ.) (@VGS = 10 V) 3. Packaging and Pin Assignment SSM3K361TU 1: Gate 2: Source 3: Drain UFM 4. Orderable part number Orderable part number AEC-Q101 SSM3K361TU,LF SSM3K361TU,LXGF SSM3K361TU,LXHF � YES YES Note 1: For detail information, please contact our sales. (Note 1) Note General Use Unintended Use Automotive Use (Note 1) ©2016-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2016-12 2022-04-19 Rev.9.0 SSM3K361TU 5.