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SSM3K36FS
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
SSM3K36FS
○ High-Speed Switching Applications
• 1.5-V drive • Low ON-resistance : Ron = 1.52 Ω (max) (@VGS = 1.5 V)
: Ron = 1.14 Ω (max) (@VGS = 1.8 V) : Ron = 0.85 Ω (max) (@VGS = 2.5 V) : Ron = 0.66 Ω (max) (@VGS = 4.5 V) : Ron = 0.63 Ω (max) (@VGS = 5.0 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25 °C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
20
V
Gate-source voltage
VGSS
± 10
V
Drain current
DC
ID
500
mA
Pulse
IDP
1000
Drain power dissipation
PD (Note 1)
150
mW
Channel temperature Storage temperature range
Tch
150
°C
Tstg
−55 to 150
°C
JEDEC
―
Note:
Using continuously under heavy loads (e.g.
SSM3K36FS Datasheet
