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SSM3K36MFV - N-Channel MOSFET

Features

  • (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 1.52 Ω (max) (VGS = 1.5 V) RDS(ON) = 1.14 Ω (max) (VGS = 1.8 V) RDS(ON) = 0.85 Ω (max) (VGS = 2.5 V) RDS(ON) = 0.66 Ω (max) (VGS = 4.5 V) RDS(ON) = 0.63 Ω (max) (VGS = 5.0 V) 3. Packaging and Internal Circuit VESM SSM3K36MFV 1: Gate 2: Source 3: Drain ©2024 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2008-02 2024-11-19 Rev.2.0 SSM3K36MFV 4. Absolute Maximum Ratings (Note) (Unless otherwise.

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Full PDF Text Transcription

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MOSFETs Silicon N-Channel MOS (U-MOS�) SSM3K36MFV 1. Applications • High-Speed Switching 2. Features (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 1.52 Ω (max) (VGS = 1.5 V) RDS(ON) = 1.14 Ω (max) (VGS = 1.8 V) RDS(ON) = 0.85 Ω (max) (VGS = 2.5 V) RDS(ON) = 0.66 Ω (max) (VGS = 4.5 V) RDS(ON) = 0.63 Ω (max) (VGS = 5.0 V) 3. Packaging and Internal Circuit VESM SSM3K36MFV 1: Gate 2: Source 3: Drain ©2024 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2008-02 2024-11-19 Rev.2.0 SSM3K36MFV 4.
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