Datasheet Summary
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SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
DESIGNED FOR USE IN AUDIO STAGE MEDIUM POWER AMPLIFIERS. REMENDED FOR OUTPUT AMPLIFIER STAGE IN CLASS B PUSH-PULL OPERATION.
HIGH RELIABILITY.
LOW FREQUENCY MEDIUM POWER AMPLIFIERS-
DRIVER STAGE AMPLIFIERS.
Features
. Excellent hFE vs. Collector Current Characteristics h FE ( 2 )=23Min. at VCE =1V, r C =400mA . plementary to S1806.
Unit in mm
5.1 MAX.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Range Storage Temperature
SYMBOL VCBO 'CEO vEBO
[ stg
RATING 40 30
500 250 625 150...