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S1805 - Silicon NPN Transistor

Features

  • . Excellent hFE vs. Collector Current Characteristics h FE ( 2 )=23Min. at VCE =1V, r C =400mA . Complementary to S1806. Unit in mm 5.1 MAX.

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Datasheet Details

Part number S1805
Manufacturer Toshiba
File Size 78.96 KB
Description Silicon NPN Transistor
Datasheet download datasheet S1805 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: ) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) S1805 DESIGNED FOR USE IN AUDIO STAGE MEDIUM POWER AMPLIFIERS. RECOMMENDED FOR OUTPUT AMPLIFIER STAGE IN CLASS B PUSH-PULL OPERATION. HIGH RELIABILITY. LOW FREQUENCY MEDIUM POWER AMPLIFIERS- DRIVER STAGE AMPLIFIERS. FEATURES . Excellent hFE vs. Collector Current Characteristics h FE ( 2 )=23Min. at VCE =1V, r C =400mA . Complementary to S1806. Unit in mm 5.1 MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Range Storage Temperature SYMBOL VCBO 'CEO vEBO IB [ stg RATING 40 30 500 250 625 150 -55-150 UNIT V mA mA mV °C 1. EMITTER 2. BASE 3.
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