HN2S01F - Silicon Epitaxial Schottky Barrier Type Diode

Toshiba

Datasheet Details

Part number	HN2S01F
Manufacturer	Toshiba
File Size	227.17 KB
Description	Silicon Epitaxial Schottky Barrier Type Diode
Datasheet	HN2S01F Datasheet

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application HN2S01F Unit: mm z HN2S01F is composed of 3 independent diodes. z Low reverse current: VF = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 1* A Power dissipation P 300 mW Junction temperature Tj 125 °C Storage temperature range Operating temperature range Tstg −55 to 125 °C JEDEC Topr −40 to 100 °C JEITA ― SC-74 Note: Using continuously under heavy loads (e.g.