Datasheet4U Logo Datasheet4U.com

HN2S04FU - Epitaxial Schottky Barrier Type Diode

📥 Download Datasheet

Datasheet preview – HN2S04FU

Datasheet Details

Part number HN2S04FU
Manufacturer Toshiba
File Size 203.58 KB
Description Epitaxial Schottky Barrier Type Diode
Datasheet download datasheet HN2S04FU Datasheet
Additional preview pages of the HN2S04FU datasheet.

📁 Similar Datasheet

  • HN2029CG - (HN20xxCG) 10/100 Base-T Dual Port Transformer (Mingtek)
  • HN2063CG - (HN20xxCG) 10/100 Base-T Dual Port Transformer (Mingtek)
  • HN2064CG - (HN20xxCG) 10/100 Base-T Dual Port Transformer (Mingtek)
  • HN2066CG - (HN20xxCG) 10/100 Base-T Dual Port Transformer (Mingtek)
  • HN2067CG - (HN20xxCG) 10/100 Base-T Dual Port Transformer (Mingtek)
  • HN2074CG - (HN20xxCG) 10/100 Base-T Dual Port Transformer (Mingtek)
  • HN20N03 - N-Channel Enhancement Mode Power MOSFET (ETC)
  • HN27128AG - 16K x 8-Bit UV EPROM (Hitachi)
  • HN27512 - 512K UV and OTP EPROM (Hitachi)
  • HN27C101A - 1M UV and OTP EPROM (Hitachi)
Other Datasheets by Toshiba
  • HN2S01F - Silicon Epitaxial Schottky Barrier Type Diode
  • HN2S01FU - Silicon Epitaxial Schottky Barrier Type Diode
  • HN2S02FU - Silicon Epitaxial Schottky Barrier Type Diode
  • HN2S02JE - Silicon Epitaxial Schottky Barrier Type Diode
  • HN2S03FU - Silicon Epitaxial Schottky Barrier Type Diode
  • HN20S01F - Silicon Epitaxial Schottky Barrier Type Diode
  • HN20S01FU - Silicon Epitaxial Schottky Barrier Type Diode
  • HN2A01FU - Silicon PNP Epitaxial Type Transistor

Full PDF Text Transcription

Click to expand full text
TOSHIBA Diode Epitaxial Schottky Barrier Type HN2S04FU HN2S04FU High-Speed Switching Application Unit: mm z The HN2S04FU consists of three separate diodes. z Low forward voltage: VF (3) = 0.36V (typ.) z Low reverse current: IR= 50 μA (max) z Small total capacitance: CT = 46 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse Voltage VRM 25 V Reverse voltage VR 20 V Maximum (peak) forward current IFM 450 * mA Average forward current IO 200 * mA Surge current (10 ms) IFSM 1* A Power dissipation P 200 ** mW Junction temperature Tj 125 °C JEDEC ― Storage temperature range Tstg −55 to 125 °C JEITA ― Operating temperature range *: Per one diode. Topr −40 to 100 °C TOSHIBA 1-2T1C Weight: 0.
Published: |