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HN2S03FU - Silicon Epitaxial Schottky Barrier Type Diode

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Part number HN2S03FU
Manufacturer Toshiba
File Size 204.51 KB
Description Silicon Epitaxial Schottky Barrier Type Diode
Datasheet download datasheet HN2S03FU Datasheet
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S03FU HN2S03FU High Speed Switching Application Unit: mm z HN2S03FU is composed of 3 independent diodes. z Low forward voltage : VF (3) = 0.50V (typ.) z Low reverse current : IR= 0.5μA (max) z Small total capacitance : CT = 3.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 25 V Reverse voltage VR 20 V Maximum (peak) forward current IFM 100 * mA Average forward current IO 50 * mA Surge current (10ms) IFSM 1* A Power dissipation P 200 ** mW Junction temperature Tj 125 °C JEDEC ― Storage temperature range Tstg −55 to 125 °C JEITA ― Operating temperature range Topr −40 to 110 °C TOSHIBA 1-2T1C Weight: 6.2 mg (typ.
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