Toshiba Electronic Components Datasheet

C4686A Datasheet

Silicon NPN Triple Diffused Planar Type Transistor

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2SC4686,2SC4686A

TOSHIBA Transistor Silicon NPN Triple Diffused Planar Type

2SC4686, 2SC4686A

TV Dynamic Focus Applications

High-Voltage Switching Applications

High-Voltage Amplifier Applications

Unit: mm

• High voltage: VCEO = 1200 V (max)(2SC4686A)

• Small collector output capacitance: Cob = 2.2 pF (typ.) (VCB = 100 V)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter

voltage

2SC4686

2SC4686A

Emitter-base voltage

Collector current

Pulse

Base current

Collector power

dissipation

Ta = 25°C

Tc = 25°C

Junction temperature

Storage temperature range

VCBO

VCEO

VEBO

ICP

Tstg

1500

1000

1200

100

150

−55 to 150

°C

JEDEC

―

JEITA

SC-67

TOSHIBA

2-10R1A

Weight: 1.7 g (typ.)

Note 1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

1 2010-03-10

Toshiba Electronic Components Datasheet

C4686A Datasheet

Silicon NPN Triple Diffused Planar Type Transistor

No Preview Available !

Electrical Characteristics (Ta = 25°C)

2SC4686,2SC4686A

Characteristics

Collector cut-off current

Emitter cut-off current

Collector-base breakdown voltage

Collector-emitter

breakdown

voltage

2SC4686

2SC4686A

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

Test Condition

ICBO

IEBO

V (BR) CBO

VCB = 1200 V, IE = 0

VEB = 5 V, IC = 0

IC = 100 μA, IE = 0

V (BR) CEO IC = 1 mA, IB = 0

hFE

VCE (sat)

VBE (sat)

Cob

VCE = 5 V, IC = 3 mA

IC = 10 mA, IB = 2 mA

VCE = 10 V, IC = 3 mA

VCB = 100 V, f = 1 MHz, IE = 0

Min Typ. Max Unit

― ― 1.0 μA

― ― 10 μA

1500 ―

―

1000

1200

―

15 ― 60

― 0.16 1.5

― 0.7 1.5

― 5.5 ― MHz

― 2.2 ― pF

Marking

C4686

Part No. (or abbreviation code) *1

Lot No.

Part No.

(or abbreviation code)

*1 C4686

C4686A

Part No.

2SC4686

2SC4686A

Note 2

Note 2: A line under a Lot No. identifies the indication of product Labels.

Not underlined: [[Pb]]/INCLUDES > MCV

Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27

January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.

2 2010-03-10

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C4686A Datasheet

Silicon NPN Triple Diffused Planar Type Transistor

C4686A Datasheet

Silicon NPN Triple Diffused Planar Type Transistor

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