C4681
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC4681
Strobe Flash Applications Medium Power Amplifier Applications
2SC4681
Unit: mm
- Excellent h FE linearity : h FE (1) = 200 to 600 (VCE = 2 V, IC = 0.5 A) : h FE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)
- Low collector saturation voltage : VCE (sat) = 0.5 V (max) (IC = 3 A, IB = 60 m A)
- plementary to 2SA1802
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Pulse (Note)
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCES VCEO VEBO
Tj Tstg
30 30 10 6 3
0.5 1.0 10 150
- 55 to 150
A W °C °C
Note: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
JEDEC
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