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Toshiba Electronic Components Datasheet

C4686 Datasheet

2SC4686

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2SC4686,2SC4686A
TOSHIBA Transistor Silicon NPN Triple Diffused Planar Type
2SC4686, 2SC4686A
TV Dynamic Focus Applications
High-Voltage Switching Applications
High-Voltage Amplifier Applications
Unit: mm
High voltage: VCEO = 1200 V (max)(2SC4686A)
Small collector output capacitance: Cob = 2.2 pF (typ.) (VCB = 100 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter
voltage
2SC4686
2SC4686A
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
1500
1000
1200
5
50
100
25
2
10
150
55 to 150
V
V
V
mA
mA
W
°C
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note 1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-03-10


Toshiba Electronic Components Datasheet

C4686 Datasheet

2SC4686

No Preview Available !

Electrical Characteristics (Ta = 25°C)
2SC4686,2SC4686A
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter
breakdown
voltage
2SC4686
2SC4686A
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CBO
VCB = 1200 V, IE = 0
VEB = 5 V, IC = 0
IC = 100 μA, IE = 0
V (BR) CEO IC = 1 mA, IB = 0
hFE
VCE (sat)
VBE (sat)
fT
Cob
VCE = 5 V, IC = 3 mA
IC = 10 mA, IB = 2 mA
IC = 10 mA, IB = 2 mA
VCE = 10 V, IC = 3 mA
VCB = 100 V, f = 1 MHz, IE = 0
Min Typ. Max Unit
― ― 1.0 μA
― ― 10 μA
1500
V
1000
1200
V
15 60
0.16 1.5
V
0.7 1.5
V
5.5 MHz
2.2 pF
Marking
C4686
Part No. (or abbreviation code) *1
Lot No.
Part No.
(or abbreviation code)
*1 C4686
C4686A
Part No.
2SC4686
2SC4686A
Note 2
Note 2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2 2010-03-10


Part Number C4686
Description 2SC4686
Maker Toshiba Semiconductor
PDF Download

C4686 Datasheet PDF






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