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Toshiba Electronic Components Datasheet

C4213 Datasheet

2SC4213

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4213
2SC4213
For Muting and Switching Applications
Unit: mm
High emitter-base voltage: VEBO = 25 V (min)
High reverse hFE: Reverse hFE = 150 (typ.) (VCE = 2 V, IC = 4 mA)
Low on resistance: RON = 1 (typ.) (IB = 5 mA)
High DC current gain: hFE = 200~1200
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 50 V
Collector-emitter voltage
VCEO 20 V
Emitter-base voltage
VEBO 25 V
Collector current
IC 300 mA
Base current
IB 60 mA
Collector power dissipation
PC
100 mW
JEDEC
Junction temperature
Storage temperature range
Tj 125 °C
Tstg
55~125
°C
JEITA
TOSHIBA
SC-70
2-2E1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.006 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1 2007-11-01


Toshiba Electronic Components Datasheet

C4213 Datasheet

2SC4213

No Preview Available !

Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
VCB = 50 V, IE = 0
IEBO
VEB = 25 V, IC = 0
hFE
(Note)
VCE = 2 V, IC = 4 mA
VCE (sat)
VBE
fT
IC = 30 A, IB = 3 mA
VCE = 2 V, IC = 4 mA
VCE = 6 V, IC = 4 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
Turn-on time
ton
Switching time Storage time
tstg
Fall time
tf
Duty cycle <= 2%
Note: hFE classification A: 200~700, B: 350~1200
2SC4213
Min Typ. Max Unit
⎯ ⎯ 0.1 μA
⎯ ⎯ 0.1 μA
200 1200
0.042 0.1
V
0.61
V
30 MHz
4.8 7 pF
160
500
ns
130
2 2007-11-01


Part Number C4213
Description 2SC4213
Maker Toshiba
PDF Download

C4213 Datasheet PDF






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