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Toshiba Electronic Components Datasheet

BD139 Datasheet

SILICON NPN EPITAXIAL TYPE TRANSISTOR

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SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
BD135
BD137
BD1 39I
MEDIUM POWER AMPLIFIER APPLICATIONS.
FEATURES
. Designed for Complementary Use with BD136, BD138
and BD140.
7.9MAX.
Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base
Voltage
BD135
BD137
BD139
Collector-Emitter
Voltage
BD135
BD137
BD139
Emitter-Base Voltage
Collector Current
DC
Peak
Collector Power
Dissipation
Ta=25 C
Tc^60 C
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
v CEO
Vebo
I CM
RATING
45
60
80
45
60
80
0.5
1.5
PC
L stg
6.5
150
-55-150
UNIT
1. EMITTER
Z. COLLECTOR (HEAT S INK)
Z. BASE
TO— 126
TOSHIBA
2-8P1A
Weight : 0.72g
ELECTRICAL CHARACTERISTICS (Ta=25 C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICBO
V CB=30V, I E=0
Vcb=30V, lE=0, Ta=125°C
Emitter Cut-off Current
lEBO VEB=5V, I C =0
Collector-Emitter
Breakdown Voltage
BD135
BD137 V(BR)CE0 IC=30mA, Ib=0
BD139
DC Current Gain
Collector-Emitter
Saturation Voltage
hFE(l) VcE=2v . Ic=5mA
hFE(2) VCE=2V, I c =150mA
hFE(3) VCE=2V, I c =500mA
VcE(sat) IC=500mA, lB=50mA
Base-Emitter Voltage
Transition Frequency
VBE V CE=2V, Ic= 500mA
f T V CE=2V, I C=50mA
MIN.
-
-
-
45
60
80
25
40
25
TYP.
-
-
-
-
-
-
-
-
-
MAX. UNIT
0.1
10
fik
10 fik
-
-V
-
-
250
-
- - 0.5 V
- - 1.0 V
50 250
- MHz
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-1007-


Toshiba Electronic Components Datasheet

BD139 Datasheet

SILICON NPN EPITAXIAL TYPE TRANSISTOR

No Preview Available !

^1
BD135*BD137»BD139
)
In - V CE
1.4
50 COMMON
^ <£l
1.2 Tc = 2 5°C
s ^/ s
/1.0
t.
20
.
"
as 15
10
0.6
5
2.5
Ig=lmA
12 3 4 5
COLLECTOR—EMITTER VOLTAGE V CE (V)
BE
COMMON
I
EMITTER
/ VCE-2V
/ Tc=2 5°C
1.0
'
0.6
h PE - I C
:: COVMON KM1TTEK
500 " V CE = 2V
300
Tc == 2 5°C
1005 a oi ao3 ao5 ai
<
COLLECTOR CURRENT
(A)
v CE(sat)
- common emitter
0.5 -i c /Ib=io
Q3
H oo 0.1
a
Q05
003
a<
o>
5 10
30 50 100
300 500 1000 2000
COLLECTOR CURRENT I c (mA)
P C - Tc
HTT.AT
//
0.4 as
1.2
BASE—EMITTER VOLTAGE
(V)
6
5
4
2
20 40 60 80 100 120 140
CASE TEMPERATURE Tc (°C
TOSHIBA CORPORATION ••iiiiiiiiiiiiiiiittiiiiaiiitiaiiiiiiiitaiiiiiitiiiUHHittiiiiiiiiititiiiiiiiituiiiiHiMHiitiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiitiiiiiiiiiiiiitiiiiiiiitiiiiiiiitiiitiiititiiMitiiBiiaiiitiitiiiiiiiititiiiitiiiiiiti
1008


Part Number BD139
Description SILICON NPN EPITAXIAL TYPE TRANSISTOR
Maker Toshiba
Total Page 3 Pages
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