logo

2N4126 Datasheet, Toshiba

2N4126 transistor equivalent, silicon pnp transistor.

2N4126 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 55.09KB)

2N4126 Datasheet

Features and benefits

. Low Leakage Current : IcBO=-50nA(Max.) @ VcB=-20V lEBO=-50nA(Max.) @ Veb=-3V . Low Saturation Voltage
*' vCE(sat)=-0-4V(Max.) @ I C =-50mA, I B =-5mA . Low Collecto.

Application

Unit in mm FEATURES . Low Leakage Current : IcBO=-50nA(Max.) @ VcB=-20V lEBO=-50nA(Max.) @ Veb=-3V . Low Saturation V.

Image gallery

2N4126 Page 1 2N4126 Page 2

TAGS

2N4126
Silicon
PNP
Transistor
Toshiba

Manufacturer


Toshiba (https://www.toshiba.com/)

Related datasheet

2N4123

2N4124

2N4125

2N4100

2N4101

2N4102

2N4103

2N4111

2N4112

2N4113

2N4114

2N4117

2N4117A

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts