TDG100E90BEP transistor equivalent, 100v e-mode gan transistor.
* 100 V enhancement mode GaN power switch
* Bottom-side cooled configuration
* RDS(on) = 7 mΩ
* IDS(max) = 90 A
* Ultra-low FOM Island Technology® die.
* High efficiency power conversio
* High density power conversion
* ac-dc Converters
* Bridgeless Totem .
The TDG100E90BEP is an enhancement mode GaN-on-silicon power transistor based on GaN Systems Technology. The properties of GaN ensure high current, high voltage breakdown combined with high switching frequency. GaN Systems implements patented Island .
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