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TDG100E90BEP Datasheet, Teledyne

TDG100E90BEP transistor equivalent, 100v e-mode gan transistor.

TDG100E90BEP Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 2.93MB)

TDG100E90BEP Datasheet
TDG100E90BEP
Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 2.93MB)

TDG100E90BEP Datasheet

Features and benefits


* 100 V enhancement mode GaN power switch
* Bottom-side cooled configuration
* RDS(on) = 7 mΩ
* IDS(max) = 90 A
* Ultra-low FOM Island Technology® die.

Application


* High efficiency power conversio
* High density power conversion
* ac-dc Converters
* Bridgeless Totem .

Description

The TDG100E90BEP is an enhancement mode GaN-on-silicon power transistor based on GaN Systems Technology. The properties of GaN ensure high current, high voltage breakdown combined with high switching frequency. GaN Systems implements patented Island .

Image gallery

TDG100E90BEP Page 1 TDG100E90BEP Page 2 TDG100E90BEP Page 3

TAGS

TDG100E90BEP
100V
E-mode
GaN
transistor
Teledyne

Manufacturer


Teledyne

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