TDG650E60 fet equivalent, bottom- or top-side cooled 650v e-mode gan fet.
* 650 V enhancement mode power switch with P-GaN gate structure
* Bottom- or Top-side cooled configuration
* RDS(on) = 25 mΩ (typ)
* IDS(max) = 60 A
*.
* High efficiency power conversion
* High density power conversion
* ac-dc Converters
* Bridgeless Totem.
Teledyne’s TDG650E60 is an enhancement mode GaN-
on-silicon
power transistor based on GaN
Systems Technology. The properties of GaN ensure
high current, high voltage breakdown combined
with very high switching frequency. GaN Systems
implements.
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