TDG650E60 - Bottom- or Top-side Cooled 650V E-mode GaN FET

Teledyne

TDG650E60 Datasheet Preview — Preview of TDG650E60 PDF

Datasheet Details

Part number	TDG650E60
Manufacturer	Teledyne
File Size	2.66 MB
Description	Bottom- or Top-side Cooled 650V E-mode GaN FET
Datasheet	TDG650E60-Teledyne.pdf

TDG650E60 Product details

Description

Teledyne’s TDG650E60 is an enhancement mode GaN- on-silicon power transistor based on GaN Systems Technology.The properties of GaN ensure high current, high voltage breakdown combined with very high switching frequency.GaN Systems implements patented Island Technology® cell layout for high-current performance and excellent thermal characteristics.GaNPX® packaging is designed for very low parasitic inductance in a smallest package.The TDG650E60 is alternatively a Bottom- or Top-sid

Features

650 V enhancement mode power switch with P-GaN gate structure.
Bottom- or Top-side cooled configuration.
RDS(on) = 25 mΩ (typ).
IDS(max) = 60 A.
Ultra-low FOM Island Technology® die.
Ultra-low inductance GaNPX® package.
Easy gate drive requirements (0 V to 6 V) with 7V tolerance.
Transient tolerant gate drive (-20 / +10 V) 1μs.
Very high switching frequency (> 10 MHz).
Reverse current capability.

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Published: Jun 30, 2024 |