logo

TDG650E60 Datasheet, Teledyne

TDG650E60 fet equivalent, bottom- or top-side cooled 650v e-mode gan fet.

TDG650E60 Avg. rating / M : 1.0 rating-11

datasheet Download

TDG650E60 Datasheet

Features and benefits


* 650 V enhancement mode power switch with P-GaN gate structure
* Bottom- or Top-side cooled configuration
* RDS(on) = 25 mΩ (typ)
* IDS(max) = 60 A
*.

Application


* High efficiency power conversion
* High density power conversion
* ac-dc Converters
* Bridgeless Totem.

Description

Teledyne’s TDG650E60 is an enhancement mode GaN- on-silicon power transistor based on GaN Systems Technology. The properties of GaN ensure high current, high voltage breakdown combined with very high switching frequency. GaN Systems implements.

Image gallery

TDG650E60 Page 1 TDG650E60 Page 2 TDG650E60 Page 3

TAGS

TDG650E60
Bottom-
Top-side
Cooled
650V
E-mode
GaN
FET
TDG650E601TSP
TDG650E602TSP
TDG100E90BEP
Teledyne

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts