TDG650E60
Overview
Teledyne’s TDG650E60 is an enhancement mode GaN- on-silicon power transistor based on GaN Systems Technology. The properties of GaN ensure high current, high voltage breakdown combined with very high switching frequency.
- 650 V enhancement mode power switch with P-GaN gate structure
- Bottom- or Top-side cooled configuration
- RDS(on) = 25 mΩ (typ)
- IDS(max) = 60 A
- Ultra-low FOM Island Technology® die
- Ultra-low inductance GaNPX® package
- Easy gate drive requirements (0 V to 6 V) with 7V tolerance
- Transient tolerant gate drive (-20 / +10 V) 1μs
- Very high switching frequency (> 10 MHz)
- Reverse current capability
