TDM3482 mosfet equivalent, n-channel enhancement mode mosfet.
* RDS(ON) < 16mΩ @ VGS=4.5V
RDS(ON) < 9.5mΩ @ VGS=10V
* High Power and current handling capability
* ESD protection
* Lead free product is avai.
GENERAL FEATURES
* RDS(ON) < 16mΩ @ VGS=4.5V
RDS(ON) < 9.5mΩ @ VGS=10V
* High Power and current hand.
The TDM3482 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
* RDS(ON) < 16mΩ @ VGS=4.
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