TDM3432 mosfet equivalent, n-channel enhancement mode mosfet.
* RDS(ON) < 4.1mΩ @ VGS=4.5V
RDS(ON) < 3.1mΩ @ VGS=10V
* High Power and current handling capability
* Lead free product is available
* Surface .
GENERAL FEATURES
* RDS(ON) < 4.1mΩ @ VGS=4.5V
RDS(ON) < 3.1mΩ @ VGS=10V
* High Power and current han.
The TDM3432 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
* RDS(ON) < 4.1mΩ @ VGS=.
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