TDM3435 - P-Channel Enhancement Mode MOSFET

Description

The TDM3435 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Features

‐30V/‐68A.
RDS(ON) < 15mΩ @ VGS=‐4.5V RDS(ON) < 9mΩ @ VGS=‐10V.
Reliable and Rugged.
HBM ESD capability level of 8KV typical.
Lead free product is available.
TO252 Package.

Techcode

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Datasheet Details

Part number	TDM3435
Manufacturer	Techcode
File Size	565.37 KB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	TDM3435 Datasheet
Additional preview pages of the TDM3435 datasheet.

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Full PDF Text Transcription

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Techcode® P-Channel Enhancement Mode MOSFET DESCRIPTION The TDM3435 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES  ‐30V/‐68A  RDS(ON) < 15mΩ @ VGS=‐4.

Published: Sep 19, 2024 |