TSM4N60 mosfet equivalent, 600v n-channel power mosfet.
* Robust high voltage termination
* Avalanche energy specified
* Diode is characterized for use in bridge circuits
* Source to Drain diode recovery time c.
The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. There devices are well suited for high efficienc.
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