TSM4N80 datasheet, mosfet equivalent, Taiwan Semiconductor

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Features and benefits

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* Low RDS(ON) 3Ω (Max.) Low gate charge typical @ 25nC (Typ.) Improve dv/dt capability Block Diagram Ordering Information Part No. TSM4N80CZ C0 TSM4N80C.

Application

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Description

The TSM4N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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