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TSM4N90 - N-Channel Power MOSFET

Description

The TSM4N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • Low RDS(ON) 4Ω (Max. ) Low gate charge typical @ 25nC (Typ. ) Improve dv/dt capability Block Diagram Ordering Information Part No. TSM4N90CZ C0 Package TO-220 Packing 50pcs / Tube TSM4N90CI C0G ITO-220 50pcs / Tube Note: “G” denote for Halogen Free Product N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current.
  • Peak Diode Recovery dv/dt (Note 3) Single.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSM4N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 900 4 @ VGS =10V ID (A) 4 General Description The TSM4N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge. Features ● ● ● Low RDS(ON) 4Ω (Max.) Low gate charge typical @ 25nC (Typ.) Improve dv/dt capability Block Diagram Ordering Information Part No.
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