Datasheet4U Logo Datasheet4U.com

TSM2320 - 20V N-Channel Enhancement Mode MOSFET

Features

  • — — Advanced trench process technology High density cell design for ultra low on-resistance — — Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Block Diagram Ordering Information Part No. TSM2320CX Packing Tape & Reel Package SOT-23 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Operating Jun.

📥 Download Datasheet

Datasheet Details

Part number TSM2320
Manufacturer Taiwan Semiconductor Company
File Size 295.14 KB
Description 20V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet TSM2320 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TSM2320 20V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 3.0A = 45mΩ RDS (on), Vgs @ 2.5V, Ids @ 2.0A = 65mΩ www.DataSheet4U.com Features — — Advanced trench process technology High density cell design for ultra low on-resistance — — Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Block Diagram Ordering Information Part No.
Published: |