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TSM2321 - 20V P-Channel Enhancement Mode MOSFET

Key Features

  • — — Advanced trench process technology High density cell design for ultra low on-resistance — — Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Block Diagram Ordering Information Part No. TSM2321CX Packing Tape & Reel Package SOT-23 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Operating Jun.

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Datasheet Details

Part number TSM2321
Manufacturer Taiwan Semiconductor Company
File Size 300.48 KB
Description 20V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet TSM2321 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSM2321 -20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = - 20V RDS (on), Vgs @ -4.5V, Ids @ -3.2A = 65mΩ RDS (on), Vgs @ -2.5V, Ids @ -2.0A = 90mΩ www.DataSheet4U.com Features — — Advanced trench process technology High density cell design for ultra low on-resistance — — Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Block Diagram Ordering Information Part No.